Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure
- 21 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (16) , 2135-2137
- https://doi.org/10.1063/1.118969
Abstract
A single-electron transistor has been fabricated by an optical fabrication method. A small dot, a source and drain reservoir, and in-plane gates are all built from the two-dimensional electron gas of an n-type GaAs/AlGaAs heterostructure. Laser-written p-doped lines are used to define this dot with a diameter of about 70 nm and to insulate it from the in-plane gates. Tunnel junctions connect the dot with source and drain. The in-plane gates are used to tune the tunnel junctions and to change the electrostatic potential of the dot. A large charging energy of 5 meV and clear Coulomb-blockade oscillations are observed at helium temperature, due to a small dot capacitance of about 3×10−17 F.Keywords
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