Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2) , 1253-1255
- https://doi.org/10.1063/1.330542
Abstract
Interface morphology of the molecular beam epitaxial growth of Ge on (100) GaAs and of GaAs on (100) Ge at 400 °C has been studied by reflection high energy electron diffraction. The (100) Ge surface shows a (2×2) reconstruction pattern. A smooth and planar growth of Ge on GaAs is observed; growth of GaAs on Ge, however, shows a rougher surface with a roughness estimated to be several angstroms which is in agreement with our studies on the Ge-GaAs superlattices using other techniques.This publication has 16 references indexed in Scilit:
- Ge-GaAs superlattices by molecular beam epitaxyApplied Physics Letters, 1981
- Atomic reconstruction at polar interfaces of semiconductorsJournal of Vacuum Science and Technology, 1980
- Combined LEED, AES, and work function studies during the formation of Ge : GaAs(110) heterostructuresJournal of Vacuum Science and Technology, 1980
- Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfacesPhysical Review B, 1980
- Surface reactions and interdiffusionJournal of Vacuum Science and Technology, 1979
- Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlatticesJournal of Crystal Growth, 1979
- Polar heterojunction interfacesPhysical Review B, 1978
- Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic StructurePhysical Review Letters, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962