Strain relief study concerning the InxGa1−xAs/GaAs (0.07<x<0.5) material system
- 6 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (18) , 2000-2002
- https://doi.org/10.1063/1.105045
Abstract
The evolution of dislocations in the InxGa1−xAs/GaAs material system has been studied as a function of the ternary alloy comparison in the range 0.07<xxxx ≳0.28, all the dislocations are observed in the epilayer while the GaAs appears to be dislocation‐free. We propose a model involving the balance of forces acting on misfit dislocations generated at the heterointerface which includes a surface image force term to explain our observations of dislocation evolution as a function of the ternary alloy composition.Keywords
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