Comparison of models for redistribution of dopants in silicon during thermal oxidation
- 30 November 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (11) , 1283-1287
- https://doi.org/10.1016/0038-1101(73)90084-1
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Discussion of “On the Redistribution of Boron in the Diffused Layer During Thermal Oxidization” [J. S. T. Huang and L. C. Welliver (pp. 1577–1580, Vol. 117, No. 12)]Journal of the Electrochemical Society, 1971
- On the Redistribution of Boron in the Diffused Layer during Thermal OxidationJournal of the Electrochemical Society, 1970
- Impurity Redistribution in a Semiconductor during Thermal OxidationJournal of the Electrochemical Society, 1967
- ErrataSolid-State Electronics, 1966
- The base diffusion profile arising from boron redistribution in the oxide—a useful approximationSolid-State Electronics, 1965
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964