Localized wet-chemical etching of InP induced by laser heating
- 15 September 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (6) , 574-576
- https://doi.org/10.1063/1.94430
Abstract
Light at 5145 Å is used to induce rapid localized etching of grooves and holes in InP samples (of all doping types) immersed in aqueous solutions of phosphoric acid. In the absence of light no etching takes place. The process is shown to be thermally activated.Keywords
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