High-power, high-efficiency K-band AlGaAs/GaAs heterojunction bipolar transistors
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We report on the state-of-the-art power performance of AlGaAs/GaAs HBTs at K-band. A prematched 12/spl times/(1.6/spl times/25) /spl mu/m/sup 2/ HBT unit cell exhibited 1.18 W CW output power (3.93 W/mm output power density) and 57.1% power-added efficiency with 6.6 dB associated gain at 20 GHz at a collector bias of 10.5 V. Peak power-added efficiency achieved was 57.8% at an output power level of 1.08 W. No intentional harmonic tuning was applied.Keywords
This publication has 12 references indexed in Scilit:
- One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etchingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 20 GHz high power high efficiency HEMT modulePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-efficiency GaAs-based pHEMT power amplifier technology for 1-18 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-power, high-efficiency cell design for 26 GHz HBT power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-efficiency X-band HBT power amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Four-watt, Kt-band MMIC amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- High-performance 0.15-μm-gate-length pHEMTs enhanced with a low-temperature-grown GaAs bufferPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- The use of base ballasting to prevent the collapse of current gain in AlGaAs/GaAs heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1996
- 1 W Ku-band AlGaAs/GaAs power HBT's with 72% peak power-added efficiencyIEEE Transactions on Electron Devices, 1995
- Current gain collapse in microwave multifinger heterojunction bipolar transistors operated at very high power densitiesIEEE Transactions on Electron Devices, 1993