Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
For the first time, depletion-mode GaAs MOSFETs with undetectable hysteresis and negligible drain current drift I-V characteristics were successfully fabricated using MBE grown Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) as the gate oxide. The absence of drain current drift and hysteresis is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.Keywords
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