Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide
- 30 November 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (11) , 1751-1753
- https://doi.org/10.1016/s0038-1101(97)00181-0
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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