Isolation characteristics in selectively O+ and Cr+ implanted GaAs
- 16 March 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 76 (1) , K9-K12
- https://doi.org/10.1002/pssa.2210760150
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Selective carrier removal using oxygen implantation in GaAsElectronics Letters, 1981
- Carrier Reduction in n-GaAs by Cr Ion ImplantationJapanese Journal of Applied Physics, 1980
- Carrier removal profiles from oxygen implanted GaAsElectronics Letters, 1978
- Semi-insulating layers of GaAs by oxygen implantationJournal of Applied Physics, 1976