Growth of GaPAsSb single crystals
- 31 December 1982
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 60 (2) , 447-449
- https://doi.org/10.1016/0022-0248(82)90124-5
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Liquid phase epitaxy of a new semiconductor AlGaInSbElectronics Letters, 1982
- Liquid Phase Epitaxial Growth of InAs1-x-yPxSby on InAs SubstrateJapanese Journal of Applied Physics, 1981
- The quaternary alloy system AlxGayIn1−x−ySbJournal of Applied Physics, 1981
- Reduction of the Dislocation Density in GaAs1 − x Sb x Layer on GaAs Grown by an Improved LPE MethodJournal of the Electrochemical Society, 1980