A Comparison of Conventional Dose Rate and Low Dose Rate Co-60 Testing of Idt Static RAMS and FSC Multiplexers
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 4050-4055
- https://doi.org/10.1109/tns.1985.4334067
Abstract
IDT71681L70 4K×4 static rams and FSC54F251 multiplexers failed conventional Co-60 radiation testing before reaching a cumulative dose of 10 Krad (Si). At a significantly lower dose rate of 23 rad (Si)/Hr these devices accumulated more than 38 Krad (Si) before failing. The effects on radiation hardness of going to a satellite mission dose rate of 2.3 rad(Si)/Hr are discussed.Keywords
This publication has 9 references indexed in Scilit:
- A Comparison of Conventional 60Co Testing and Low Dose-Accumulation-Rate Exposure of Metal-Gate CMOS IC'sIEEE Transactions on Nuclear Science, 1984
- Dose Rate Effects in MOS MicrocircuitsIEEE Transactions on Nuclear Science, 1984
- Modeling of MOS Radiation and Post Irradiation EffectsIEEE Transactions on Nuclear Science, 1984
- Physical Mechanisms Contributing to Device "Rebound"IEEE Transactions on Nuclear Science, 1984
- Super Recovery of Total Dose Damage in MOS DevicesIEEE Transactions on Nuclear Science, 1984
- Recovery of Damage in Rad-Hard MOS Devices during and after Irradiation by Electrons, Protons, Alphas, and Gamma RaysIEEE Transactions on Nuclear Science, 1983
- Predicting CMOS Inverter Response in Nuclear and Space EnvironmentsIEEE Transactions on Nuclear Science, 1983
- Total Dose Effects in Recessed Oxide Digital Bipolar MicrocircuitsIEEE Transactions on Nuclear Science, 1983
- CMOS Hardness Prediction for Low-Dose-Rate EnvironmentsIEEE Transactions on Nuclear Science, 1977