Distribution of Boron Implanted Silicon
- 1 January 1971
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Simple Bakable GoniometerReview of Scientific Instruments, 1970
- Diode edge effect on doping-profile measurementsIEEE Transactions on Electron Devices, 1970
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- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline TargetsPhysical Review B, 1969
- Improved profiles of electrical activity in boron implanted siliconPhysics Letters A, 1968
- RANGE AND DISTRIBUTION OF IMPLANTED BORON IN SILICONApplied Physics Letters, 1968
- On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance TechniqueIBM Journal of Research and Development, 1968
- Channeling of medium-mass ions through siliconCanadian Journal of Physics, 1968