Stress distributions in silicon crystal substrates with thin films
- 1 April 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4) , 2782-2791
- https://doi.org/10.1063/1.329006
Abstract
The three-dimensional stress distributions in a substrate due to a rectangular film deposited on the substrate are calculated by linear elastic theory on the assumption of a concentrated force at the film edge. Furthermore, on the basis of the results, resolved shear stress distributions in a (001) silicon crystal substrate are calculated to evaluate the character of the dislocations generated at the film edge. These calculated results are compared to experimental ones obtained in a sample of a (001) silicon substrate with a 3×3-mm-square pattern of Si3N4 film. The results show that the glide planes and Burgers vectors of the dislocations generated at the film edge can be determined by a simple rule.This publication has 12 references indexed in Scilit:
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