Effect of doping on formation of dislocation structure in semiconductor crystals
- 1 April 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 52, 396-403
- https://doi.org/10.1016/0022-0248(81)90225-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Image contrast of triple loops in tellurium-doped gallium arsenidePhilosophical Magazine, 1969