The magnetic field-assisted assembly of nanoscale semiconductor devices: A new technique
- 1 October 2004
- journal article
- Published by Springer Nature in JOM
- Vol. 56 (10) , 32-34
- https://doi.org/10.1007/s11837-004-0286-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Sacrificial layer process with laser-driven release for batch assembly operationsJournal of Microelectromechanical Systems, 1998
- VCSELs bonded directly to foundry fabricated GaAs smart pixel arraysIEEE Photonics Technology Letters, 1997
- A vertical-cavity surface-emitting laser appliqued to a 0.8-μm NMOS driverIEEE Photonics Technology Letters, 1997
- Epitaxial lift-off GaAs/AlGaAs metal-semiconductor-metal photodetectors with back passivationIEEE Photonics Technology Letters, 1993
- Gallium arsenide and other compound semiconductors on siliconJournal of Applied Physics, 1990
- Double-heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built-in index guiding by selective-area molecular beam epitaxyApplied Physics Letters, 1990
- AlxGa1−xAs-GaAs vertical-cavity surface-emitting laser grown on Si substrateApplied Physics Letters, 1990
- Extreme selectivity in the lift-off of epitaxial GaAs filmsApplied Physics Letters, 1987
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984
- Beam-lead devices and integrated circuitsProceedings of the IEEE, 1965