Systematic Analysis of Energy and Delay Impact of Very Deep Submicron Process Variability Effects in Embedded SRAM Modules
- 1 April 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 914-919 Vol. 2
- https://doi.org/10.1109/date.2005.291
Abstract
Variability is becoming a serious problem in process technology for nanometer technology nodes. The increasing difficulty in controlling the uniformity of critical process parameters (e.g. doping levels) in the smaller devices, makes the electrical properties of such scaled devices much less predictable than in the past. In this paper, we study how these technology effects influence the energy and delay of a SRAM module. Despite the implications in the correct operation of the module, in practically all cases the affected memory implementations become also slower while consuming on average more energy than nominally. This is partly counter-intuitive and no existing literature describes this in a systematic generic way for SRAMs. In this paper, we identify and illustrate the different mechanisms behind this unexpected behavior and quantify the impact of these effects for on-chip SRAMs at the 65 nm technology node.Keywords
This publication has 8 references indexed in Scilit:
- A low cost individual-well adaptive body bias (IWABB) scheme for leakage power reduction and performance enhancement in the presence of intra-die variationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Implications of fundamental threshold voltage variations for high-density SRAM and logic circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- New paradigm of predictive MOSFET and interconnect modeling for early circuit simulationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An easy-to-use mismatch model for the MOS transistorIEEE Journal of Solid-State Circuits, 2002
- The impact of intrinsic device fluctuations on CMOS SRAM cell stabilityIEEE Journal of Solid-State Circuits, 2001
- Speed and power scaling of SRAM'sIEEE Journal of Solid-State Circuits, 2000
- Mismatch Characterization of Submicron MOS TransistorsAnalog Integrated Circuits and Signal Processing, 1997
- Matching properties of MOS transistorsIEEE Journal of Solid-State Circuits, 1989