Infrared absorption from OH− ions adjacent to lithium acceptors in hydrothermally grown ZnO
- 15 December 2004
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (12) , 7168-7172
- https://doi.org/10.1063/1.1806531
Abstract
An intense infrared absorption band has been observed in a hydrothermally grown ZnO crystal. At , the band peaks near and has a half width of , and at , the band peaks at and has a half width of . This absorption band is highly polarized, with its maximum intensity occurring when the electric field of the measuring light is parallel to the axis of the crystal. Photoinduced electron-paramagnetic-resonance experiments show that the crystal contains lithium acceptors (i.e., lithium ions occupying zinc sites). Lithium and ions are present in the crystal because lithium carbonate, sodium hydroxide, and potassium hydroxide are used as solvents during the hydrothermal growth. In the as-grown crystal, some of the lithium acceptors will have an ion located at an adjacent axial oxygen site (to serve as a passivator), and we assign the band observed at to these neutral complexes. Our results illustrate the role of hydrogen as a charge compensator for singly ionized acceptors in ZnO.
This publication has 46 references indexed in Scilit:
- Hydrogen as a shallow center in semiconductors and oxidesPhysica Status Solidi (b), 2002
- Thermal stability of ion-implanted hydrogen in ZnOApplied Physics Letters, 2002
- Infrared spectroscopy of hydrogen in ZnOApplied Physics Letters, 2002
- Hydrogen-related defects in ZnO studied by infrared absorption spectroscopyPhysical Review B, 2002
- Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnOApplied Physics Letters, 2002
- Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 2002
- Hydrogen: A Relevant Shallow Donor in Zinc OxidePhysical Review Letters, 2002
- Strategies for Controlling the Conductivity of Wide-Band-Gap SemiconductorsPhysica Status Solidi (b), 2002
- Defect analysis and engineering in ZnOPhysica B: Condensed Matter, 2001
- Hydrogen as a Cause of Doping in Zinc OxidePhysical Review Letters, 2000