Soft error rate increase for new generations of SRAMs
- 1 December 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 50 (6) , 2065-2068
- https://doi.org/10.1109/tns.2003.821593
Abstract
We report on enhanced susceptibility for neutron-induced soft errors from accelerated testing of static random access memories (SRAMs), performed at Los Alamos National Laboratory. This enhancement is per bit of memory.Keywords
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