Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
Open Access
- 1 April 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (7) , 2978-2984
- https://doi.org/10.1063/1.358714
Abstract
High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500 °C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500 °C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline β-SiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.This publication has 15 references indexed in Scilit:
- SiC for sensors and high-temperature electronicsSensors and Actuators A: Physical, 1994
- Chemical bonding analysis of a-SiC : H films by Raman spectroscopyJournal of Non-Crystalline Solids, 1994
- Annealing behavior of MeV implanted carbon in siliconJournal of Applied Physics, 1993
- Carbon negative ion implantation into siliconNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- Synthesis of β-SiC Layer in Silicon by Carbon Ion `Hot' ImplantationJapanese Journal of Applied Physics, 1992
- Defects in SIMOX structures: some process dependenceMaterials Science and Engineering: B, 1992
- Mechanism of buried β-SiC formation by implanted carbon in siliconThin Solid Films, 1990
- High-temperature ion beam synthesis of cubic SiCJournal of Applied Physics, 1990
- Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectraPhilosophical Magazine Part B, 1981
- Measurement of Film Thickness from Lattice Absorption BandsJournal of the Electrochemical Society, 1973