SiC devices for advanced power and high-temperature applications
- 1 April 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Industrial Electronics
- Vol. 48 (2) , 307-308
- https://doi.org/10.1109/41.915409
Abstract
Silicon carbide (SiC) process technology has made rapid progress, resulting in the realization of very promising electronic devices and sensors, enabling advanced solutions in power industry and mobile systems. In particular, for electronics working under harsh environmental conditions, SiC devices reach unprecedented performance. Transfer to production has already started for some applications.Keywords
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