HEMT technology: Potential and advances

This publication has 10 references indexed in Scilit:

• Noise Perfomance of Microwave HEMT
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
• Microwave performance of 0.25-µm gate length high electron mobility transistors
  IEEE Electron Device Letters, 1985
• AlGaAs/GaAs 2-DEG FET's fabricated from MO-CVD Wafers
  IEEE Electron Device Letters, 1985
• Microwave characterization of (Al,Ga)As/GaAs modulation-doped FET's: Bias dependence of small-signal parameters
  IEEE Transactions on Electron Devices, 1984
• Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistors
  Applied Physics Letters, 1984
• Quarter micron low noise GaAs FET's
  IEEE Electron Device Letters, 1982
• Modulation-doped (Al,Ga)As/GaAs FETs with high transconductance and electron velocity
  Electronics Letters, 1982
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions
  Japanese Journal of Applied Physics, 1980
• Optimal noise figure of microwave GaAs MESFET's
  IEEE Transactions on Electron Devices, 1979
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979