InAs/antimonide-based resonant tunneling structures with ternary alloy layers
- 1 April 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (4-6) , 981-985
- https://doi.org/10.1016/0038-1101(94)90341-7
Abstract
No abstract availableKeywords
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