Self-consistent simulation of modulation-doped field-effect transistors

This publication has 8 references indexed in Scilit:

• High-performance submicrometer AlInAs-GaInAs HEMT's
  IEEE Electron Device Letters, 1988
• A novel 2DEGFET model based on the parabolic velocity-field curve approximation
  IEEE Transactions on Electron Devices, 1986
• A model for the current—Voltage characteristics of MODFET's
  IEEE Transactions on Electron Devices, 1986
• Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's
  IEEE Transactions on Electron Devices, 1985
• Quasi-Fermi level bending in MODFET's and its effect on FET transfer characteristics
  IEEE Transactions on Electron Devices, 1985
• The influence of donor neutralization on the transfer characteristics of MODFET's at 77 K: Theory and experiment
  IEEE Transactions on Electron Devices, 1985
• Subbands and charge control in a two-dimensional electron gas field-effect transistor
  Applied Physics Letters, 1984
• Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
  IEEE Transactions on Electron Devices, 1982