A folded extended window MOSFET for ULSI applications
- 1 August 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (8) , 388-390
- https://doi.org/10.1109/55.753
Abstract
A novel, simple, and straightforward technology, FEWMNOS, for a high-packing-density LDD CMOS device, is described. A salicide polysilicon layer, termed a window pad, is used as a window etch stop, source/drain (S/D) diffusion source, and extra sublevel interconnection layer. The reductions in layout area in transistors and in many applications including memory and ASICs (application-specific integrated circuits) are significant.Keywords
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