Silicon preamorphization and shallow junction formation for ULSI circuits
- 1 November 1989
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 18 (6) , 721-730
- https://doi.org/10.1007/bf02657525
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Enhanced diffusion phenomena during rapid thermal annealing of preamorphized boron-implanted siliconPhysica Status Solidi (a), 1986
- Application of Rapid Isothermal Annealing to Shallow p‐n Junctions via BF 2 ImplantsJournal of the Electrochemical Society, 1985
- Channeling effect for low energy ion implantation in SiNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Shallow boron-doped junctions in siliconJournal of Applied Physics, 1985
- Junction leakage studies in rapid thermal annealed diodesApplied Physics Letters, 1984
- Rapid thermal annealing of BF2+implanted, preamorphized siliconIEEE Electron Device Letters, 1983
- Channeling effect of low energy boron implant inIEEE Electron Device Letters, 1983
- Anomalous Boron Profiles Produced by BF 2 Implantation into SiliconJournal of the Electrochemical Society, 1980
- Anomalous carrier profiles in BF+2-ion-implanted siliconJournal of Applied Physics, 1979
- Boron implantations in silicon: A comparison of charge carrier and boron concentration profilesApplied Physics A, 1974