Identification of donor impurities in InSb by means of magneto-optical excitation spectra

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Abstract
The donor impurities in InSb are identified by the observation of central cell structure in the donor optical excitation spectra. Components of the (000) to (010) (1s to 2p-) transition are resolved by studies of the far-infrared photoconductivity and transmission in high magnetic fields. Lines due to Se, Te and Sn impurities are identified with suitably doped samples. Spectra of the residual donors in zone-refined, Czochralski pulled, and liquid-phase epitaxial material are compared with these results. The ordering of the central cell components of different impurities is described by a theory based on a tight-binding calculation and from a comparison of atomic energy levels of host and impurity atoms.