Heteroepitaxial Growth of Layered GaSe Films on GaAs(001) Surfaces
- 1 October 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (10A) , L1444-1447
- https://doi.org/10.1143/jjap.32.l1444
Abstract
Epitaxial films of layered GaSe with (0001) surfaces have been grown on GaAs(001) substrates in spite of the large difference in their crystal symmetry. In situ observation of reflection high-energy electron diffraction has revealed that a number of facets grow on the surface of GaAs(001) under Se irradiation. The existence of those facets is essential to the single-domain growth of a layered GaSe film on a GaAs(001) surface.Keywords
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