Deep levels in heat-treated and252Cf-irradiated p-type silicon substrates with different oxygen content
- 1 August 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (8) , 1474-1479
- https://doi.org/10.1088/0268-1242/9/8/005
Abstract
No abstract availableKeywords
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