Femtosecond pulse laser second harmonic generation on semiconductor electrodes
- 30 June 1994
- journal article
- Published by Elsevier in Electrochimica Acta
- Vol. 39 (8-9) , 1245-1249
- https://doi.org/10.1016/0013-4686(94)e0043-y
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- Characterization of SiO2/Si(100) interface structure of ultrathin SiO2 films using spatially resolved electron energy loss spectroscopyApplied Physics Letters, 1992
- Fluorine Adsorption and Etching on Si(111):SiH Surface during Immersion in HF SolutionJapanese Journal of Applied Physics, 1992
- Investigations of the SiO2/Si interface. I. Oxidation of a clean Si(100) surface using photoemission spectroscopy with synchrotron radiationJournal of Applied Physics, 1989
- Investigation of the SiO2/Si interface. II. Oxidation of an HF-cleaned Si(100) surface using photoemission spectroscopy with synchrotron radiationJournal of Applied Physics, 1989
- In SituCharacterization of the Illuminated Silicon-Electrolyte Interface by Fourier-Transform Infrared SpectroscopyPhysical Review Letters, 1989
- Chemical structure of ultrathin thermally grown oxides on a Si(100)-wafer using core level photoemissionSurface Science, 1987
- The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interfaceJournal of Applied Physics, 1987
- Probing the transition layer at the SiO2-Si interface using core level photoemissionApplied Physics Letters, 1984
- SiSiO2 interface characterization by ESCASurface Science, 1979
- An ESCA Study of the Oxide at the Si ‐ SiO2 InterfaceJournal of the Electrochemical Society, 1975