Investigation of the SiO2/Si interface. II. Oxidation of an HF-cleaned Si(100) surface using photoemission spectroscopy with synchrotron radiation
- 15 May 1989
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (10) , 4019-4023
- https://doi.org/10.1063/1.343324
Abstract
The oxidation of a Si(100) surface cleaned using a HF solution and exposed to air, and the composition of the SiO2/Si interface are studied in situ by high resolution (ΔE2/Si interface for the HF‐cleaned Si restricts oxidation—the diffusion of oxygen atoms into the Si substrate. In the results, the proportions of Si2+ and Si3+ intermediary states at the interface increase and the interface broadens (0.85–1.0 nm), compared with the oxidation of the clean Si(100) surface.This publication has 18 references indexed in Scilit:
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