Some electrical measurements on gaseous ion implanted metallic and insulating thin films
- 1 January 1982
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 63 (1) , 73-80
- https://doi.org/10.1080/00337578208222828
Abstract
Experimental results on changes in conductivity of N2+ and Ar+ bombarded thin copper, aluminium and bismuth films are given along with the preliminary observations on photoconductivity of N2+ bombarded Bi2O3 thin films. The performance of a low cost, medium resolution 200 keV ion implantation system, used in the above experiments is also discussed.Keywords
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- Changes in the phase structure and formation of chemical compounds by ion implantation of tantalum thin filmsThin Solid Films, 1976
- Reactive ion bombardment of tantalum thin film resistorsThin Solid Films, 1973
- Ion Implantation in Semiconductors and Other MaterialsPublished by Springer Nature ,1973