Liquid phase epitaxial growth of high purity In1−xGaxAs and InP on (100) and (111)B faces
- 31 October 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 59 (3) , 572-582
- https://doi.org/10.1016/0022-0248(82)90381-5
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Effect of Baking Temperature on Purity of LPE Ga0.47In0.53AsJapanese Journal of Applied Physics, 1981
- Liquid-phase epitaxial growth of InP and InGaAsP alloysJournal of Crystal Growth, 1981
- Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applicationsJournal of Crystal Growth, 1981
- Growth of InP by infinite solution LPEJournal of Crystal Growth, 1981
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- Determination of In-Ga-As phase diagram at 650 °C and LPE growth of lattice-matched In0.53Ga0.47As on InPJournal of Applied Physics, 1979
- Background carrier concentration and electron mobility in LPE In1−xGaxAsyP1−y layersApplied Physics Letters, 1979
- Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP SubstratesJournal of the Electrochemical Society, 1978
- Very-high-purity InP l.p.e. layersElectronics Letters, 1977
- Liquid Phase Epitaxy of InPJournal of the Electrochemical Society, 1974