Effect of spatial averaging on the compositional analysis of crystals by absorption spectroscopy
- 15 January 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (2) , 547-554
- https://doi.org/10.1063/1.333061
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Melt temperature fluctuations: Causes and response of the solidification frontAdvances In Space Research, 1983
- Carbon in silicon: Properties and impact on devicesSolid-State Electronics, 1982
- A test of the boundary layer model in unsteady Czochralski growthJournal of Crystal Growth, 1982
- Striation etching of undoped, semi-insulating lec-grown GaAsJournal of Crystal Growth, 1982
- Convective effects in crystals grown from meltJournal of Crystal Growth, 1981
- Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscaleApplied Physics Letters, 1981
- Oxygen striation and thermally induced microdefects in Czochralski-grown silicon crystalsApplied Physics Letters, 1980
- Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laserApplied Physics Letters, 1980
- Magnetic Susceptibility and Optical Studies of Cr3+ in Al2O3 (Ruby): Magnetic Method for Determing ConcentrationJournal of Applied Physics, 1971
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965