Growth of Si and in double-doped dislocation-free conductive GaAs crystal by the LEC technique
- 30 June 1986
- journal article
- Published by Elsevier in Materials Letters
- Vol. 4 (4) , 189-193
- https://doi.org/10.1016/0167-577x(86)90094-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Dislocation-free silicon-doped gallium arsenide grown by LEC procedureJournal of Crystal Growth, 1983
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- (Invited) Growth of Undoped Semi-Insulating GaAs Single CrystalJapanese Journal of Applied Physics, 1983
- EPD investigation in LEC‐grown silicon‐doped gallium arsenideCrystal Research and Technology, 1983
- Effect of doping on formation of dislocation structure in semiconductor crystalsJournal of Crystal Growth, 1981