The structure and electrical characteristics of oxidized semi-insulating polycrystalline silicon
- 1 March 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (5) , 2494-2500
- https://doi.org/10.1063/1.345500
Abstract
The influence of an oxidizing ambient on the structure and electrical characteristics of thin films of semi-insulating polysilicon (SIPOS) has been studied. It is shown that SIPOS films 135 nm thick can be completely oxidized to amorphous silicon dioxide after 24 h at 600 °C in wet oxygen. The midgap interface state density after oxidation and postmetallization anneal is 4×1010 cm−2 eV−1. We also show that this material is suitable for use as a low-temperature deposited gate dielectric for polycrystalline thin-film transistors.This publication has 29 references indexed in Scilit:
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