Electrical activation of boron-implanted silicon during rapid thermal annealing

This publication has 14 references indexed in Scilit:

• Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
  Applied Physics Letters, 1987
• Comparison of boron diffusivity during rapid thermal annealing in predamaged, preamorphized and crystalline silicon
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Anomalous Enhanced Diffusion and Electrical Activation of Boron in Silicon After Rapid Isothermal Annealing
  Physica Status Solidi (a), 1986
• Diffusion and Activation During Rapid Thermal Annealing of Implanted Boron in Silicon
  MRS Proceedings, 1985
• Three-Dimensional Monte Carlo Simulations--Part II: Recoil Phenomena
  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1985
• Electrical activation and damage annealing of boron-implanted silicon by flash-lamp irradiation
  Physica Status Solidi (a), 1984
• Impurity Diffusion During RTA
  MRS Proceedings, 1984
• Studies on the lattice position of boron in silicon†
  Radiation Effects, 1983
• Disorder produced by high-dose implantation in Si
  Applied Physics Letters, 1976
• Lattice location and atomic mobility of implanted boron in silicon
  Radiation Effects, 1974