Comparison of boron diffusivity during rapid thermal annealing in predamaged, preamorphized and crystalline silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 19-20, 512-515
- https://doi.org/10.1016/s0168-583x(87)80102-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Modeling Rapid Thermal Diffusion of Arsenic and Boron in SiliconJournal of the Electrochemical Society, 1984
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