Silicon nitride films prepared by reactive plasma sputtering
- 1 December 1978
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 55 (2) , 185-190
- https://doi.org/10.1016/0040-6090(78)90048-2
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low TemperaturesJournal of the Electrochemical Society, 1972
- Analysis of silicon nitride layers deposited from SiH4 and N2 on siliconJournal of Physics and Chemistry of Solids, 1971
- Evaluation of Silicon Nitride Layers of Various Composition by Backscattering and Channeling-Effect MeasurementsJournal of Applied Physics, 1971
- Characterization of Silicon Nitride FilmsJournal of the Electrochemical Society, 1971
- Structure and electrical properties of InSb thin films prepared by plasmatic sputteringCzechoslovak Journal of Physics, 1970
- Property Changes in Pyrolytic Silicon Nitride with Reactant Composition ChangesJournal of the Electrochemical Society, 1968
- Films of Silicon Nitride-Silicon Dioxide MixturesJournal of the Electrochemical Society, 1968
- Vapor Deposition of Silicon Nitride on GaAs by SiCl4-NH3-N2 SystemJapanese Journal of Applied Physics, 1967
- Silicon Nitride Films by Reactive SputteringJournal of the Electrochemical Society, 1967
- The Preparation and Properties of Amorphous Silicon Nitride FilmsJournal of the Electrochemical Society, 1967