Electronic transport and density of states distribution in diamond thin films
- 15 April 1992
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 1 (5-6) , 673-676
- https://doi.org/10.1016/0925-9635(92)90188-t
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Compensation effects in nitrogen-doped diamond thin filmsApplied Physics Letters, 1991
- Density of states distribution in diamond thin filmsApplied Physics Letters, 1991
- Charge transport in boron-doped diamond thin filmsPhilosophical Magazine Part B, 1991
- Infrared absorption in boron-doped diamond thin filmsApplied Physics Letters, 1991
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1989
- Boron doping of diamond thin filmsApplied Physics Letters, 1989
- Diamond electronic devices-a critical appraisalSemiconductor Science and Technology, 1989
- Large-area a-Si:H TFT arrays for printing, input scanning and electronic copying applicationsJournal of Non-Crystalline Solids, 1987
- High-temperature point-contact transistors and Schottky diodes formed on synthetic boron-doped diamondIEEE Electron Device Letters, 1987
- Investigation of the density of localized states in a-Si using the field effect techniqueJournal of Non-Crystalline Solids, 1976