The Influence of Quantization on the Space‐Charge Layer Capacitance of Si in Strong Accumulation

This publication has 6 references indexed in Scilit:

• Surface quantization effect on the macroscopic characteristics of semiconductor space-charge layers
  Surface Science, 1984
• Interface states on semiconductor/insulator surfaces
  C R C Critical Reviews in Solid State Sciences, 1976
• Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.
  Progress of Theoretical Physics Supplement, 1975
• Saturation capacitance of thin oxide MOS structures and the effective surface density of states of silicon
  Solid-State Electronics, 1974
• A general solution of the quantization in a semiconductor surface inversion layer in the electric quantum limit
  Physics Letters A, 1972
• Effect of Electric and Magnetic Fields on the Self-Consistent Potential at the Surface of a Degenerate Semiconductor
  Physical Review B, 1972