Electron and hole trapping in the buried oxide of Unibond wafers
- 1 December 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 44 (6) , 2106-2114
- https://doi.org/10.1109/23.659025
Abstract
No abstract availableThis publication has 28 references indexed in Scilit:
- Electron spin resonance characterization of Unibond(R) materialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Electron spin resonance characterization of trapping centers in Unibond buried oxidesIEEE Transactions on Nuclear Science, 1996
- Electron trapping in buried oxides during irradiation at 40 and 300 KIEEE Transactions on Nuclear Science, 1996
- Confinement Phenomena in Buried Oxides of SIMOX Structures as Affected by ProcessingJournal of the Electrochemical Society, 1996
- Bulk trap formation by high temperature annealing of buried thermal oxides [SIMOX]IEEE Transactions on Nuclear Science, 1995
- Silicon on insulator material technologyElectronics Letters, 1995
- Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structuresJournal of Applied Physics, 1995
- Deep and Shallow Electron Trapping in the Buried Oxide Layer of SIMOX StructuresJournal of the Electrochemical Society, 1994
- Paramagnetic defect centers in BESOI and SIMOX buried oxidesIEEE Transactions on Nuclear Science, 1993
- Reduction of charge trappings and electron tunneling in SIMOX by supplemental implantation of oxygenIEEE Transactions on Nuclear Science, 1993