RHEED intensity analysis of Si(001)2 × 1 and 2 × 1-K surface structures
- 1 February 1991
- journal article
- Published by Elsevier in Surface Science
- Vol. 242 (1-3) , 65-68
- https://doi.org/10.1016/0039-6028(91)90243-l
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Proposal for symmetric dimers at the Si(100)-2×1 surfacePhysical Review Letters, 1989
- Total energy calculations of missing dimer reconstructions on the silicon (001) surfaceJournal of Physics: Condensed Matter, 1989
- REM Observation on Conversion between Single-Domain Surfaces of Si(001) 2×1 and 1×2 Induced by Specimen Heating CurrentJapanese Journal of Applied Physics, 1989
- Angle-resolved ultraviolet photoelectron spectroscopic study of Si(001)-(2×1)/K and Si(001)-(2×1)/Cs surfacesPhysical Review B, 1989
- Photoelectron diffraction study of Si(001) 2 × 1-K surface: Existence of a potassium double layerPhysical Review B, 1988
- Angle-resolved photoelectron-spectroscopy study of the Si(001)2×1-K surfacePhysical Review B, 1987
- Model-potential-based simulation of Si(100) surface reconstructionPhysical Review B, 1987
- Measurement of Overlayer-Plasmon Dispersion in K Chains Adsorbed on Si(001)2×1Physical Review Letters, 1984
- Theoretical determination of surface atomic geometry: Si(001)-(2×1)Physical Review B, 1981
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979