Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

30 July 1990

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (5) , 463-465
https://doi.org/10.1063/1.103667

Abstract

Current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy with nonuniform doping in the base region have been studied. Experimental measurements indicate that an optimization of the base doping leads to substantial improvement in the current gain and related properties. Unequal variations of the band-gap narrowing effect and Fermi–Dirac statistics effect seem to underlie this improvement. It is found that, in general, the higher the nonuniformity of the base doping, the lower is the offset voltage of the HBT.

Keywords

This publication has 14 references indexed in Scilit:

Influence of doping dependent bandgap grading on electrical performance and design criteria of npn AlzGa1−zAs/GaAs abrupt heterojunction bipolar transistors
Solid-State Electronics, 1990
Magnetic anisotropy induced by magnetic field cooling in Ni3Mn alloys
Journal of Applied Physics, 1988
Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region
Solid-State Electronics, 1985
Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTs
Japanese Journal of Applied Physics, 1985
Collector-emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors
Applied Physics Letters, 1985
Collector/emitter offset voltage in double-heterojunction bipolar transistors
Electronics Letters, 1984
Optimum emitter grading for heterojunction bipolar transistors
Applied Physics Letters, 1983
Impact ionization near GaAs grain boundaries
Applied Physics Letters, 1983
Bipolar transistor with graded band-gap base
Electronics Letters, 1983
Influence of surface conditions on silicon planar transistor current gain
Solid-State Electronics, 1967