Current-voltage characteristics of p-InGaN∕n-GaN vertical conducting diodes on n+-SiC substrates
- 30 November 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (23)
- https://doi.org/10.1063/1.2140483
Abstract
P - In Ga N ∕ n - Ga N vertical conducting diodes have been grown on n+-SiC substrates by low-pressure metalorganic vapor phase epitaxy and their current-voltage characteristics have been investigated. The typical forward voltage drop was 3.8–4.0 V at a forward current density of 100A∕cm2 with an on-state resistance of ∼1.3mΩcm2. The ideality factor of the samples was ∼2, meaning that the tunneling current through defects is small enough in these devices. The breakdown voltage (VB) increased with increasing n-GaN layer thickness, while it increased with decreasing carrier concentration of the layer by substituting undoped GaN for n-GaN. When the undoped GaN layer thickness was increased to 1800 nm, the highest breakdown voltage of 305 V was obtained with a low on-state resistance (Ron) of 1.51mΩcm2, leading to the figure-of-merit, (VB)2∕Ron, of 62MW∕cm2.Keywords
This publication has 14 references indexed in Scilit:
- High-power characteristics of GaN/InGaN double heterojunction bipolar transistorsApplied Physics Letters, 2004
- Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiersApplied Physics Letters, 2003
- High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaNApplied Physics Letters, 2003
- Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTsIEEE Electron Device Letters, 2003
- Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 2003
- The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor depositionJournal of Crystal Growth, 2000
- Reduced damage of electron cyclotron resonance etching by In doping into p-GaNJournal of Crystal Growth, 2000
- AlGaN/GaN heterojunction bipolar transistorIEEE Electron Device Letters, 1999
- Performance evaluation of high-power wide band-gap semiconductor rectifiersJournal of Applied Physics, 1999
- Growth and fabrication of GaN/AlGaN heterojunction bipolar transistorApplied Physics Letters, 1999