Mg-acceptor activation mechanism and transport characteristics in p-type InGaN grown by metalorganic vapor phase epitaxy

The Mg-acceptor activation mechanism and transport characteristics in a Mg-doped InGaN layer grown by metalorganic vapor phase epitaxy are systematically investigated through their structural, optical, and electrical properties. The In mole fraction was from 0 to 0.13, and the Mg concentration varied from ${\text{1×10}}^{19}$ to ${\text{1×10}}^{20} {\mathrm{cm}}^{\text{−3}}.$ X-ray rocking curves for Mg-doped InGaN layers indicate that the structural quality is comparable to that of undoped and Si-doped InGaN layers. Their photoluminescence spectra show emissions related to deep donors emerged at lower energy when Mg doping concentrations are above ${\text{2−3×10}}^{19} {\mathrm{cm}}^{\text{−3}}.$ The electrical properties also support the existence of these deep donors in the same Mg concentration range because the hole concentration starts to decrease at around the Mg concentration of ${\text{2−3×10}}^{19} {\mathrm{cm}}^{\text{−3}}.$ These results indicate that self-compensation occurs in Mg-doped InGaN at higher-doping levels. The temperature dependence of the hole concentration in Mg-doped InGaN indicates that the acceptor activation energy decreases with increasing In mole fraction. This is the reason the hole concentration in Mg-doped InGaN is higher than that in Mg-doped GaN at room temperature. In addition, the compensation ratio increases with doping concentration, which is consistent with the deep donor observed in PL spectra. For Mg-doped InGaN, impurity band conduction is dominant in carrier transport up to a relatively higher temperature than that for Mg-doped GaN, since the acceptor concentration for Mg-doped InGaN is higher than that of Mg-doped GaN.