The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition
- 1 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 730-733
- https://doi.org/10.1016/s0022-0248(00)00808-3
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Simulation of the electrical characteristics of AlGaN/GaN heterojunction bipolar transistorsSolid-State Electronics, 2000
- GaN/AlGaN HBT fabricationSolid-State Electronics, 2000
- AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour depositionElectronics Letters, 2000
- Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTsPhysica Status Solidi (a), 1999
- AlGaN/GaN HBTs using regrown emitterElectronics Letters, 1999
- Characterization of a GaN Bipolar Junction Transistor after Operation at 300 for over 300 hJapanese Journal of Applied Physics, 1999
- AlGaN/GaN heterojunction bipolar transistorIEEE Electron Device Letters, 1999
- High-temperature reliability of GaN metal semiconductor field-effect transistor and bipolar junction transistorJournal of Applied Physics, 1999
- High performance AlGaN/GaN HEMT with improved OhmiccontactsElectronics Letters, 1998
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contactsApplied Physics Letters, 1998