AlGaN/GaN heterojunction bipolar transistors grownbymetal organic chemical vapour deposition
- 6 January 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 36 (1) , 80-81
- https://doi.org/10.1049/el:20000053
Abstract
Heterojunction bipolar transistors based on aluminium gallium nitride/gallium nitride (AlGaN/GaN) structures have been fabricated and characterised. The devices were grown by metal organic chemical vapour deposition on c-plane sapphire substrates. The Npn structure consists of an n-GaN layer followed by an n+-GaN subcollector contact, an unintentionally doped GaN collector, p-GaN base, and an N-Al0.1G0.9N emitter with n+-GaN contact. Devices yielded good transistor performance with a DC current gain as high as 100 at room temperature.Keywords
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