Modification of silicon structure during highly intensive Ar+ion implantation
- 1 January 1985
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 90 (3-4) , 307-315
- https://doi.org/10.1080/00337578508222540
Abstract
By means of transmission electron microscopy it is established that the rearrangement of silicon structure under highly intensive Ar+ ion implantation proceeds through the four following well-defined stages: (i) disorder accumulation; (ii) amorphization; (iii) solid phase epitaxy; (iv) structure modifications in the crystallized layers. The features of structure modifications during these stages of implantation are different. This is suggested to be a result of variation of the dynamic balance between the accumulation of radiation damage and thermally activated annealing.Keywords
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