112-GHz, 157-GHz, and 180-GHz InP HEMT traveling-wave amplifiers
- 1 December 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 46 (12) , 2553-2559
- https://doi.org/10.1109/22.739247
Abstract
We report traveling-wave amplifiers having 1-112 GHz bandwidth with 7 dB gain, and 1-157 GHz bandwidth with 5 dB gain. A third amplifier exhibited 5 dB gain and a 180 GHz high-frequency cutoff. The amplifiers were fabricated in a 0.1-/spl mu/m gate length InGaAs/InAlAs HEMT MIMIC technology. The use of gate-line capacitive-division, cascode gain cells and low-loss elevated coplanar waveguide lines have yielded record bandwidth broad-band amplifiers.Keywords
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