In Situ Hrem Observations of Crystallization in LPCVD Amorphous Silicon
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
This article describes the application of in situ, high-resolution electron microscopy to the study of crystal nucleation and growth in amorphous silicon. It is shown that dynamic events at elevated temperatures (e.g. 600-750°C) can be recorded at the atomic level by such an approach. It is anticipated that fundamental information, important for the technological development of polysilicon thin films, can be generated by work of this type.Keywords
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